A standard CMOS humidity sensor without post-processing

Sensors (Basel). 2011;11(6):6197-202. doi: 10.3390/s110606197. Epub 2011 Jun 8.

Abstract

A 2 μW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

Keywords: CMOS integrated circuits; capacitive sensors; humidity measurement; microsensors.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Electric Power Supplies
  • Electrochemistry / methods
  • Electrodes
  • Equipment Design
  • Humidity
  • Micro-Electrical-Mechanical Systems / methods
  • Microcomputers*
  • Polymers / chemistry
  • Pyrroles / chemistry
  • Reproducibility of Results
  • Software
  • Temperature

Substances

  • Polymers
  • Pyrroles