High-performance, all-solution-processed organic nanowire transistor arrays with inkjet-printing patterned electrodes

Nanliu Liu; Yan Zhou; Na Ai; Chan Luo; Junbiao Peng; Jian Wang; Jian Pei; Yong Cao

doi:10.1021/la2033324

High-performance, all-solution-processed organic nanowire transistor arrays with inkjet-printing patterned electrodes

Langmuir. 2011 Dec 20;27(24):14710-5. doi: 10.1021/la2033324. Epub 2011 Nov 11.

Authors

Nanliu Liu¹, Yan Zhou, Na Ai, Chan Luo, Junbiao Peng, Jian Wang, Jian Pei, Yong Cao

Affiliation

¹ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Physics and Chemistry of Luminescence, South China University of Technology, Guangzhou 510640, PR China.

PMID: 22043855
DOI: 10.1021/la2033324

Abstract

Organic nanowire (NW) transistor arrays with a mobility of as high as 1.26 cm(2)·V(-1)·S(-1) are fabricated by combining the dip-coating process to align the NW into arrays with the inkjet printing process to pattern the source/drain electrodes. A narrow gap of ~20 μm has been obtained by modifying the inkjet process. The all-solution process is proven to be a low-cost, high-yield, simple approach to fabricating high-performance organic NW transistor arrays over a large area.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Crystallization
Electrodes
Electronics / instrumentation
Electronics / methods*
Nanotechnology / methods*
Nanowires / analysis
Nanowires / chemistry*
Printing / instrumentation
Printing / methods*
Transistors, Electronic