Ion beam nanopatterning and micro-Raman spectroscopy analysis on HOPG for testing FIB performances

B S Archanjo; I O Maciel; E H Martins Ferreira; S B Peripolli; J C Damasceno; C A Achete; A Jorio

doi:10.1016/j.ultramic.2011.04.007

Ion beam nanopatterning and micro-Raman spectroscopy analysis on HOPG for testing FIB performances

Ultramicroscopy. 2011 Jul;111(8):1338-42. doi: 10.1016/j.ultramic.2011.04.007. Epub 2011 Apr 29.

Authors

B S Archanjo¹, I O Maciel, E H Martins Ferreira, S B Peripolli, J C Damasceno, C A Achete, A Jorio

Affiliation

¹ Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Normalização e Qualidade Industrial (INMETRO), Duque de Caxias 25250-020, Rio de Janeiro, RJ, Brazil. bsarchanjo@inmetro.gov.br

PMID: 21864774
DOI: 10.1016/j.ultramic.2011.04.007

Abstract

This work reports Ga(+) focused ion beam nanopatterning to create amorphous defects with periodic square arrays in highly oriented pyrolytic graphite and the use of Raman spectroscopy as a new protocol to test and compare progresses in ion beam optics, for low fluence bombardment or fast writing speed. This can be ultimately used as a metrological tool for comparing different FIB machines and can contribute to Focused Ion Beam (FIB) development in general for tailoring nanostructures with higher precision. In order to do that, the amount of ion at each spot was varied from about 10(6) down to roughly 1 ion per dot. These defects were also analyzed by using high resolution scanning electron microscopy and atomic force microscopy. The sensitivities of these techniques were compared and a geometrical model is proposed for micro-Raman spectroscopy in which the intensity of the defect induced D band, for a fixed ion dose, is associated with the diameter of the ion beam. In addition, the lateral increase in the bombarded spot due to the cascade effect of the ions on graphite surface was extracted from this model. A semi-quantitative analysis of the distribution of ions at low doses per dot or high writing speed for soft modification of materials is discussed.