Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure

P S Wong; B L Liang; V G Dorogan; A R Albrecht; J Tatebayashi; X He; N Nuntawong; Yu I Mazur; G J Salamo; S R J Brueck; D L Huffaker

doi:10.1088/0957-4484/19/43/435710

Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure

Nanotechnology. 2008 Oct 29;19(43):435710. doi: 10.1088/0957-4484/19/43/435710. Epub 2008 Sep 22.

Authors

P S Wong¹, B L Liang, V G Dorogan, A R Albrecht, J Tatebayashi, X He, N Nuntawong, Yu I Mazur, G J Salamo, S R J Brueck, D L Huffaker

Affiliation

¹ Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA.

PMID: 21832714
DOI: 10.1088/0957-4484/19/43/435710

Abstract

InAs quantum dots embedded in InGaAs quantum well (DWELL: dots-in-the-well) structures grown on nanopatterned GaAs pyramids and planar GaAs(001) surface are comparatively investigated. Photoluminescence (PL) measurements demonstrate that the DWELL structure grown on the GaAs pyramids exhibits a broad quantum well PL band (full width at half-maximum ∼ 90 meV) and a higher quantum dot emission efficiency than the DWELL structure grown on the planar GaAs(001) substrate. These properties are attributed to the InGaAs quantum well with distributed thickness profile on the faceted GaAs pyramids, which introduces a tapered energy band structure and enhances carrier capture into the quantum dots.