High Curie temperature for La(0.7)Sr(0.3)MnO(3) thin films deposited on CeO(2) /YSZ-based buffered silicon substrates

P Perna; L Méchin; M P Chauvat; P Ruterana; Ch Simon; U Scotti di Uccio

doi:10.1088/0953-8984/21/30/306005

High Curie temperature for La(0.7)Sr(0.3)MnO(3) thin films deposited on CeO(2) /YSZ-based buffered silicon substrates

J Phys Condens Matter. 2009 Jul 29;21(30):306005. doi: 10.1088/0953-8984/21/30/306005. Epub 2009 Jul 6.

Authors

P Perna¹, L Méchin, M P Chauvat, P Ruterana, Ch Simon, U Scotti di Uccio

Affiliation

¹ GREYC (UMR 6072)-CNRS-ENSICAEN, Universite Caen Basse-Normandie, 6 Boulevard Maréchal Juin, 14050 CAEN cedex, France. CNR-INFM CRS Coherentia and Dipartimento Scienze Fisiche, Universita di Napoli Federico II, Complesso Universitario di Monte S Angelo, via Cinthia 80126 NAPOLI, Italy.

PMID: 21828561
DOI: 10.1088/0953-8984/21/30/306005

Abstract

Two kinds of epitaxial structures were grown by standard pulsed laser deposition on (001) Si, namely La(0.7)Sr(0.3)MnO(3)/Bi(4)Ti(3)O(12)/CeO(2) /YSZ/Si (BTO-based), and La(0.7)Sr(0.3)MnO(3)/SrTiO(3)/CeO(2) /YSZ/Si (STO-based) multilayers. The samples were investigated by means of x-ray diffraction, transmission electron microscopy, magnetic and transport measurements. The Curie temperature T(C) of the BTO-based samples was found to be higher (360 K) than for the typical reference epitaxial LSMO film grown on (001) SrTiO(3) single crystal (345 K), due to high compressive in-plane strain. The STO-based samples show high structural quality, low roughness and high T(C) (350 K), making them interesting candidates for use in innovative LSMO-based bolometers or spintronic devices operating at room temperature.