High extractive single-photon emissions from InGaAs quantum dots on a GaAs pyramid-like multifaceted structure

Nanotechnology. 2008 Jan 30;19(4):045714. doi: 10.1088/0957-4484/19/04/045714. Epub 2008 Jan 4.

Abstract

This work investigates the single-photon emissions from self-assembled InGaAs quantum dots that are grown on an apex plane of a GaAs pyramid-like multifaceted structure. The number of QDs on a multifaceted structure is estimated by scanning electron microscopy. Single-exciton emissions from individual quantum dots are examined by micro-photoluminescence and by making photon correlation measurements. This experiment demonstrates the improvement of the single-photon extraction efficiency as quantum dots are grown on a reduced apex plane of a multifaceted structure.