Electrical control of spin dynamics in Bi(2)Se(3) was investigated in ring-type interferometers. Aharonov-Bohm and Altshuler-Aronov-Spivak resistance oscillations against a magnetic field, and Aharonov-Casher resistance oscillations against the gate voltage were observed in the presence of a Berry phase of π. A very large tunability of spin precession angle by the gate voltage has been obtained, indicating that Bi(2)Se(3)-related materials with strong spin-orbit coupling are promising candidates for constructing novel spintronic devices.