Real-time observation of impurity diffusion in silicon nanowires

Nano Lett. 2011 Sep 14;11(9):3803-8. doi: 10.1021/nl201879u. Epub 2011 Jul 29.

Abstract

Solid-state diffusion of the transition metal impurities, gold (Au), nickel (Ni), and copper (Cu), in silicon (Si) nanowires was studied by in situ transmission electron microscopy. Compared to diffusion in a bulk crystal, Au diffusion is extremely slow when the amount of metal is limited but significantly enhanced when an unlimited supply is available. Cu and Ni diffusion leads to rapid silicide formation but slows considerably with physical encapsulation by a volume-restricting carbon shell.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Crystallization
  • Diffusion
  • Electrons
  • Metal Nanoparticles / chemistry*
  • Microscopy, Electron, Transmission / methods
  • Nanotechnology / methods*
  • Nanowires / chemistry*
  • Silicon / chemistry*
  • Temperature

Substances

  • Silicon