Nonvolatile write-once-read-many times memory devices based on the composites of poly(4-vinylphenol)/Vulcan XC-72

Sunghoon Song; Tae-Wook Kim; Byungjin Cho; Yongsung Ji; Takhee Lee

doi:10.1166/jnn.2011.3713

Nonvolatile write-once-read-many times memory devices based on the composites of poly(4-vinylphenol)/Vulcan XC-72

J Nanosci Nanotechnol. 2011 May;11(5):4492-5. doi: 10.1166/jnn.2011.3713.

Authors

Sunghoon Song¹, Tae-Wook Kim, Byungjin Cho, Yongsung Ji, Takhee Lee

Affiliation

¹ Department of Nanobio Materials and Electronics, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea.

PMID: 21780484
DOI: 10.1166/jnn.2011.3713

Abstract

We fabricated write-once-read-many times (WORM) type organic memory devices in 8 x 8 cross-bar structure. The active material for organic based WORM memory devices is mixture of both poly(4-vinyphenol) (PVP) and Vulcan XC-72s. From the electrical characteristics of the WORM memory devices, we observed two different resistance states, low resistance state and high resistance state, with six orders of ON/OFF ratio (I(ON)/I(OFF) - 10(6)). In addition, the WORM memory devices were maintained for longer than 50000 seconds without any serious degradation.