We have comparatively investigated electrically pumped random lasing (RL) actions of two metal-insulator-semiconductor structured devices using pure ZnO and Zn2TiO4-nanoparticle-incorporated ZnO films as the semiconductor components i.e. light-emitting layers, respectively. It is demonstrated that the device using the Zn2TiO4-nanoparticle-incorporated ZnO film as the light-emitting layer exhibits a much smaller threshold current for the electrically pumped RL, which is ascribed to the enhanced multiple light scattering by incorporation of Zn2TiO4 nanoparticles into ZnO film. It is believed that this work provides a strategy for developing low-threshold ZnO-based random lasers.