Origin of step-like behavior in the Co/Si system

J Phys Condens Matter. 2011 Jun 22;23(24):246004. doi: 10.1088/0953-8984/23/24/246004. Epub 2011 May 26.

Abstract

A systematic investigation of the structure, nature of the interface and their possible connections with magnetic properties for the as-deposited Co/Si/Co trilayer system has been carried out. X-ray reflectivity, cross-sectional transmission electron microscopy and x-ray emission measurements performed on the Co/Si/Co trilayer system show that when the Si layer thickness is less than ∼ 20 Å, the full Si layer is converted into a cobalt silicide layer whereas when the Si layer thickness > 20 Å along with the silicide layer. the pure Si layer also remains. A comparison of magneto-optical Kerr effect and magnetoresistance measurements reveals the absence of antiferromagnetic coupling in these samples. Double-step-like magnetization, in the case of Si layer thickness > 20 Å between two Co layers, is explained by magnetization reversal of two ferromagnetic layers having different coercivities, independent of each other.

MeSH terms

  • Cobalt / chemistry*
  • Computer Simulation
  • Magnetics*
  • Materials Testing
  • Models, Chemical*
  • Silicon / chemistry*

Substances

  • Cobalt
  • Silicon