High voltage pulser with a fast fall-time for plasma immersion ion implantation

Zongtao Zhu; Chunzhi Gong; Xiubo Tian; Shiqin Yang; Ricky K Y Fu; Paul K Chu

doi:10.1063/1.3575320

High voltage pulser with a fast fall-time for plasma immersion ion implantation

Rev Sci Instrum. 2011 Apr;82(4):045102. doi: 10.1063/1.3575320.

Authors

Zongtao Zhu¹, Chunzhi Gong, Xiubo Tian, Shiqin Yang, Ricky K Y Fu, Paul K Chu

Affiliation

¹ State Key Laboratory of Advanced Welding Production and Technology, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.

PMID: 21529034
DOI: 10.1063/1.3575320

Abstract

A novel high voltage (HV) modulator that offers a short fall time to minimize sputtering effects and allow more precise control of the incident ion fluence in plasma immersion ion implantation is described. The use of 36 insulated-gate bipolar transistors in the 30 kV hard-tube pulser reduces the HV fall time to 3.5 μs, compared to a fall time of 80 μs if a pull-down resister is used. The voltage balance is achieved by a voltage-balancing resistor, clamped capacitance, and the synchronization of drive signals. Compared to the traditional method employing a pull-down resister or an additional hard tube, our design consumes less power and is more economical and reliable.