Insulating behavior in ultrathin bismuth selenide field effect transistors

Sungjae Cho; Nicholas P Butch; Johnpierre Paglione; Michael S Fuhrer

doi:10.1021/nl200017f

Insulating behavior in ultrathin bismuth selenide field effect transistors

Nano Lett. 2011 May 11;11(5):1925-7. doi: 10.1021/nl200017f. Epub 2011 Apr 12.

Authors

Sungjae Cho¹, Nicholas P Butch, Johnpierre Paglione, Michael S Fuhrer

Affiliation

¹ Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, United States.

PMID: 21486055
DOI: 10.1021/nl200017f

Abstract

Ultrathin (approximately three quintuple layer) field-effect transistors (FETs) of topological insulator Bi(2)Se(3) are prepared by mechanical exfoliation on 300 nm SiO(2)/Si susbtrates. Temperature- and gate-voltage-dependent conductance measurements show that ultrathin Bi(2)Se(3) FETs are n-type and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.