This study examined the effect of the synthesis temperatures on the characteristics of vertically aligned Ga-doped ZnO (GZO) nanorods grown on a ZnO template by thermal evaporation using Zn and Ga sources. The increase in synthesis temperature at less than 700 degrees C induced stress relaxation relative to the ZnO template due to the suppression of defect generation by the formation of nanorods, while a further increase resulted in an increase in compressive strain due to dominant Ga doping. The increase in Ga concentration in the GZO nanorods with increasing synthesis temperature was also confirmed by X-ray photoelectron spectroscopy and photoluminescence. The best conductivity was observed in the GZO nanorods grown at 800 degrees C. On the other hand, the GZO nanorods synthesized at 900 degrees C showed less conductivity and weak near-band-edge emission properties due to the generation of defects from the excess Ga.