Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot

V B Verma; Martin J Stevens; K L Silverman; N L Dias; A Garg; J J Coleman; R P Mirin

doi:10.1364/OE.19.004182

Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot

Opt Express. 2011 Feb 28;19(5):4182-7. doi: 10.1364/OE.19.004182.

Authors

V B Verma¹, Martin J Stevens, K L Silverman, N L Dias, A Garg, J J Coleman, R P Mirin

Affiliation

¹ Optoelectronics Division, National Institute of Standards and Technology, Boulder, Colorado 80305, USA. verma@nist.gov

PMID: 21369247
DOI: 10.1364/OE.19.004182

Abstract

We demonstrate photon antibunching from a single lithographically defined quantum dot fabricated by electron beam lithography, wet chemical etching, and overgrowth of the barrier layers by metalorganic chemical vapor deposition. Measurement of the second-order autocorrelation function indicates g(2)(0)=0.395±0.030, below the 0.5 limit necessary for classification as a single photon source.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Arsenicals / chemistry*
Equipment Design
Equipment Failure Analysis
Gallium / chemistry*
Indium / chemistry*
Materials Testing
Photons
Quantum Dots*

Substances

Arsenicals
Indium
gallium arsenide
Gallium
indium arsenide