On-chip parametric amplification with 26.5 dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

Bart Kuyken; Stéphane Clemmen; Shankar Kumar Selvaraja; Wim Bogaerts; Dries Van Thourhout; Philippe Emplit; Serge Massar; Gunther Roelkens; Roel Baets

doi:10.1364/OL.36.000552

On-chip parametric amplification with 26.5 dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

Opt Lett. 2011 Feb 15;36(4):552-4. doi: 10.1364/OL.36.000552.

Authors

Bart Kuyken¹, Stéphane Clemmen, Shankar Kumar Selvaraja, Wim Bogaerts, Dries Van Thourhout, Philippe Emplit, Serge Massar, Gunther Roelkens, Roel Baets

Affiliation

¹ INTEC Department, Ghent University-IMEC, Ghent, Belgium. Bart.Kuyken@Intec.ugent.be

PMID: 21326453
DOI: 10.1364/OL.36.000552

Abstract

We present what we believe to be the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5 dB at telecom wavelength is reported. Measured nonlinear parameter is 770 W(-) m(-1), nonlinear absorption 28 W(-1) m(-1), bandgap 1.61 eV.