Silicon ions are generated in the Earth's upper atmosphere by hyperthermal collisions of material ablated from incoming meteoroids with atmospheric molecules, and from charge transfer of silicon-bearing neutral species with major atmospheric ions. Reported Si(+) number density vs. height profiles show a sharp decrease below 95 km, which has been commonly attributed to the fast reaction with H(2)O. Here we report rate coefficients and branching ratios of the reactions of Si(+) and SiO(+) with O(3), measured using a flow tube with a laser ablation source and detection of ions by quadrupole mass spectrometry. The results obtained are (2σ uncertainty): k(Si(+) + O(3), 298 K) = (6.5 ± 2.1) × 10(-10) cm(3) molecule(-1) s(-1), with three product channels (branching ratios): SiO(+) + O(2) (0.52 ± 0.24), SiO + O(2)(+) (0.48 ± 0.24), and SiO(2)(+) + O (<0.1); k(SiO(+) + O(3), 298 K) = (6 ± 4) × 10(-10) cm(3) molecule(-1) s(-1), where the major products (branching ratio ≥ 0.95) are SiO(2) + O(2)(+). Reactions (1) and (2) therefore have the unusual ability to neutralise silicon directly, as well as forming molecular ions which can undergo dissociative recombination with electrons. These reactions, along with the recently reported reaction between Si(+) and O(2)((1)Δ(g)), largely explain the disappearance of Si(+) below 95 km in the atmosphere, relative to other major meteoric ions such as Fe(+) and Mg(+). The rate coefficient of the Si(+) + O(2) + He reaction was measured to be k(298 K) = (9.0±1.3) × 10(-30) cm(6) molecule(-2) s(-1), in agreement with previous measurements. The SiO(2)(+) species produced from this reaction, which could be vibrationally excited, is observed to charge transfer at a relatively slow rate with O(2), with a rate constant of k(298 K) = (1.5 ± 1.0) × 10(-13) cm(3) molecule(-1) s(-1).