Light extraction efficiency enhancement of GaN-based light emitting diodes on n-GaN layer using a SiO2 photonic quasi-crystal overgrowth

H W Huang; K Y Lee; J K Huang; C H Lin; C F Lin; C C Yu; H C Kuo

doi:10.1166/jnn.2010.2639

Light extraction efficiency enhancement of GaN-based light emitting diodes on n-GaN layer using a SiO2 photonic quasi-crystal overgrowth

J Nanosci Nanotechnol. 2010 Oct;10(10):6363-8. doi: 10.1166/jnn.2010.2639.

Authors

H W Huang¹, K Y Lee, J K Huang, C H Lin, C F Lin, C C Yu, H C Kuo

Affiliation

¹ Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan, ROC.

PMID: 21137731
DOI: 10.1166/jnn.2010.2639

Abstract

In this paper, GaN-based LEDs with a SiO2 photonic quasi-crystal (PQC) pattern on an n-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20 mA on Transistor Outline (TO)-can package, the better light output power of LED III (d = 1.2 microm) was enhanced by a factor of 1.20. After 1000 h life test (55 degrees C/50 mA) condition, Normalized output power of LED with a SiO2 PQC pattern (LED III (d = 1.2 microm)) on an n-GaN layer only decreased by 5%. This results offer promising potential to enhance the light output power of commercial light-emitting devices using the technique of nano-imprint lithography.