Three dimensional (3-D) assemblies of ZnO nanoneedles have been synthesized on silicon substrate by a unique chemical process. Each nanoneedle in the assemblies was hexagonal faceted having [001] growth direction and tip diameter approximately 20 nm. The growth of 3-D assemblies was governed by the initial nuclei formation, followed by their aggregation and subsequently nanoneedle formation from each nucleus. Room temperature photoluminescence (PL) spectrum of the assemblies showed two prominent peaks, one narrow peak in the ultraviolet region (385 nm) and another broad peak in the visible region (440 nm-600 nm). The 3-D assemblies of ZnO nanoneedles showed very good field emission property with turn-on voltages 390 V, 530 V and 680 V for the anode-emitter distances of 100 microm, 200 microm and 300 microm respectively. The turn-on voltages showed a linear relationship with the anode-emitter distance. Field enhancement factor (beta) for the nanostructure was calculated to be 2873. The high beta value and the low turn-on field are attributed to the sharp needle like structure and their interesting three dimensional assemblies.