Highly stable transparent amorphous oxide semiconductor thin-film transistors having double-stacked active layers
Adv Mater
.
2010 Dec 21;22(48):5512-6.
doi: 10.1002/adma.201002397.
Authors
Jae Chul Park
1
,
Sangwook Kim
,
Sunil Kim
,
Changjung Kim
,
Ihun Song
,
Youngsoo Park
,
U-In Jung
,
Dae Hwan Kim
,
Jang-Sik Lee
Affiliation
1
Samsung Advanced Institute of Technology, Yongin, Korea.
PMID:
20972978
DOI:
10.1002/adma.201002397
No abstract available
Publication types
Research Support, Non-U.S. Gov't
MeSH terms
Hafnium / chemistry
Indium / chemistry
Oxides / chemistry*
Transistors, Electronic*
Zinc Oxide / chemistry
Substances
Oxides
Indium
Zinc Oxide
Hafnium