Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor

Nano Lett. 2010 Nov 10;10(11):4316-20. doi: 10.1021/nl1013713.

Abstract

We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 × 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Computer Storage Devices*
  • Equipment Design
  • Equipment Failure Analysis
  • Materials Testing
  • Nanostructures / chemistry*
  • Nanostructures / ultrastructure*
  • Nanotechnology / instrumentation*
  • Particle Size
  • Signal Processing, Computer-Assisted / instrumentation*
  • Transistors, Electronic*
  • Zinc Oxide / chemistry*

Substances

  • Zinc Oxide