3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser

Opt Express. 2010 Oct 11;18(21):21645-50. doi: 10.1364/OE.18.021645.

Abstract

3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of output power at the fundamental wavelength of 1.3 µm represents the best achievement reported to date for this type of lasers.