The low-noise solar-blind photodetectors of indium-tin-oxide/LaAlO(3)/Ag (ITO/LAO/Ag) have been fabricated based on the properties of LAO bandgap excitation and the transparent conductance of ITO thin film. The ITO thin films are epitaxially grown on LAO wafers as the electrodes and detection windows of the photodetectors. The photodetectors have low noise and excellent electromagnetic shielding. The influence of the thickness of ITO thin films on the responsivity of the photodetectors has been studied. The photocurrent responsivity can reach 10.3 mA/W under the irradiation of 200-220 nm for a photodetector with 5 nm thick ITO film. The noise current is 1 pA order magnitude under the sunlight at midday. The experiment results suggest that ITO/LAO/Ag is one of the promising structures for the solar-blind deep-ultraviolet photodetectors.