Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices

Adv Mater. 2010 Nov 16;22(43):4819-22. doi: 10.1002/adma.201001872.
No abstract available

MeSH terms

  • Computer Storage Devices*
  • Electric Impedance
  • Equipment Design
  • Equipment Failure Analysis
  • Iron / chemistry*
  • Membranes, Artificial*
  • Oxides / chemistry*
  • Signal Processing, Computer-Assisted / instrumentation*
  • Strontium / chemistry*
  • Titanium / chemistry*

Substances

  • Membranes, Artificial
  • Oxides
  • Titanium
  • Iron
  • strontium titanium oxide
  • Strontium