Electroluminescence from n-In2O3:Sn randomly assembled nanorods/p-SiC heterojunction

H Y Yang; S F Yu; H K Liang; T P Chen; J Gao; T Wu

doi:10.1364/OE.18.015585

Electroluminescence from n-In2O3:Sn randomly assembled nanorods/p-SiC heterojunction

Opt Express. 2010 Jul 19;18(15):15585-90. doi: 10.1364/OE.18.015585.

Authors

H Y Yang¹, S F Yu, H K Liang, T P Chen, J Gao, T Wu

Affiliation

¹ School of Electrical & Electronic Engineering, Nanyang Technological University 639798, Singapore.

PMID: 20720938
DOI: 10.1364/OE.18.015585

Abstract

Room-temperature electroluminescence (EL) has been realized from Sn-doped In(2)O(3) (In(2)O(3):Sn) nanorods. Heterojunction light-emitting diode (LED) was formed by depositing a layer of randomly packed n-In(2)O(3):Sn nanorods onto a p-type 4H-SiC substrate. It is found that the emission intensity of the heterojunction LED under forward bias can be maximized by doping the In(2)O(3) nanorods with 3 mol. % of Sn. Furthermore, two emission peaks of the EL spectra are observed at approximately 395 and approximately 440 nm. These ultraviolet and visible peaks are attributed to the radiative recombination at Sn induced and intrinsic defect states of the In(2)O(3):Sn nanorods.

Publication types

Research Support, Non-U.S. Gov't