Band gap opening of bilayer graphene by F4-TCNQ molecular doping and externally applied electric field

Xiaoqing Tian; Jianbin Xu; Xiaomu Wang

doi:10.1021/jp102800v

Band gap opening of bilayer graphene by F4-TCNQ molecular doping and externally applied electric field

J Phys Chem B. 2010 Sep 9;114(35):11377-81. doi: 10.1021/jp102800v.

Authors

Xiaoqing Tian¹, Jianbin Xu, Xiaomu Wang

Affiliation

¹ Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR, PR China.

PMID: 20690622
DOI: 10.1021/jp102800v

Abstract

The band gap opening of bilayer graphene with one side surface adsorption of F4-TCNQ is reported. F4-TCNQ doped bilayer graphene shows p-type semiconductor characteristics. With a F4-TCNQ concentration of 1.3 x 10(-10) mol/cm(2), the charge transfer between each F4-TCNQ molecule and graphene is 0.45e, and the built-in electric field, E(bi), between the graphene layers could reach 0.070 V/A. The charge transfer and band gap opening of the F4-TCNQ-doped graphene can be further modulated by an externally applied electric field (E(ext)). At 0.077 V/A, the gap opening at the Dirac point (K), DeltaE(K) = 306 meV, and the band gap, E(g) = 253 meV, are around 71% and 49% larger than those of the pristine bilayer under the same E(ext).