Hysteresis reversion in graphene field-effect transistors

Zhi-Min Liao; Bing-Hong Han; Yang-Bo Zhou; Da-Peng Yu

doi:10.1063/1.3460798

Hysteresis reversion in graphene field-effect transistors

J Chem Phys. 2010 Jul 28;133(4):044703. doi: 10.1063/1.3460798.

Authors

Zhi-Min Liao¹, Bing-Hong Han, Yang-Bo Zhou, Da-Peng Yu

Affiliation

¹ Department of Physics, State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, People's Republic of China. liaozm@pku.edu.cn

PMID: 20687672
DOI: 10.1063/1.3460798

Abstract

To enhance performances of graphene/SiO(2) based field-effect transistors (FETs), understanding of the transfer of carriers through the graphene/SiO(2) interface is crucial. In this paper, we have studied the temperature dependent transfer characters of graphene FETs. Hysteresis loop is shown to be dominated by trapping/detrapping carriers through the graphene/SiO(2) interface.