We report the electrical transport and H(2)S sensing properties of single beta-AgVO(3) nanowire device. beta-AgVO(3) nanowires were successfully prepared by ultrasonic treatment followed by hydrothermal reaction using V(2)O(5) sol. The individual beta-AgVO(3) nanowire exhibits a "threshold switching" phenomenon. High bias (i.e., 6 V for Au contacts) is required to initially switch the individual nanowire device from nonconductive to conductive, and it may be related to the formation of nanoscale metallic Ag when enough voltage is applied between the two electrodes. This novel nanomaterial shows good H(2)S sensing performances with short response and recovery time within 20 s, relatively low response concentration of 50 ppm, and good selectivity.