Site-specific evolution of surface stress during the room-temperature oxidation of the Si(111)-(7 x 7) surface

Phys Rev Lett. 2010 Apr 9;104(14):146101. doi: 10.1103/PhysRevLett.104.146101. Epub 2010 Apr 5.

Abstract

The reaction of molecular oxygen with the Si(111)-7 x 7 surface is investigated at room temperature using in situ scanning tunneling microscopy and surface stress measurements to reveal the quantitative relationship between site-specific oxygen coverage and a decrease in tensile surface stress. This relationship is described using a modified form of the reaction model originally proposed by Dujardin et al. We show that the decrease in tensile surface stress is greatest for the faulted subunits of the 7 x 7 cell and determine the stress signatures of different reaction products, including the absence of long-lived metastable species with a unique stress signature.