Novel semiconducting quinone for air-stable n-type organic field-effect transistors

Masashi Mamada; Daisuke Kumaki; Jun-ichi Nishida; Shizuo Tokito; Yoshiro Yamashita

doi:10.1021/am1001794

Novel semiconducting quinone for air-stable n-type organic field-effect transistors

ACS Appl Mater Interfaces. 2010 May;2(5):1303-7. doi: 10.1021/am1001794.

Authors

Masashi Mamada¹, Daisuke Kumaki, Jun-ichi Nishida, Shizuo Tokito, Yoshiro Yamashita

Affiliation

¹ Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8502, Japan.

PMID: 20397645
DOI: 10.1021/am1001794

Abstract

Quinones are promising moieties for n-type organic semiconductors due to their high electron affinity. Benzo[1,2-b:4,5-b']dithiophene-4,8-dione derivative with a quinone moiety have been synthesized, characterized, and used as active layer of organic field-effect transistors (OFETs). This derivative has deep LUMO level, leading to efficient charge-carrier injection and air stability. In addition, it forms a columnar structure with efficient intermolecular pi-pi and horizontal direction interactions, leading to high electron mobilities. In fact, OFET devices fabricated here showed good n-type characteristics, where the electron mobility was 0.15 cm(2) V(-1) s(-1) under vacuum conditions and above 0.1 cm(2) V(-1) s(-1) in air.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Air
Benzoquinones / chemistry*
Equipment Design
Equipment Failure Analysis
Materials Testing
Organic Chemicals / chemistry*
Semiconductors
Transistors, Electronic*

Substances

Benzoquinones
Organic Chemicals
quinone