We report on vertical architecture hybrid transistor devices using p-type silicon as collector terminal and 2,6-diphenylindenofluorene as organic semiconductor in the emitter layer. Polystyrene spheres were used as shadow masks in order to control the diameter and density of the openings in the Al metallic base. Two processes of sphere deposition were used: electrospray and dip-coating. The electrospray deposition leads to a smaller density of sphere agglomerates, but for the used sphere diameter, approximately 200 nm, the transistor performance is similar for devices prepared with sphere deposition by both techniques. The so constructed permeable-base transistors show common-emitter current gain of the order of 10(2).