Chemical vapor deposition (CVD) with vapor-liquid-solid (VLS) growth is employed to synthesize individual Ge(2)Sb(2)Te(5) nanowires with the ultimate goal of synthesizing a large scale nanowire array for universal memory storage. A consistent challenge encountered during the synthesis is a lack of control over the composition and morphology across the growth substrate. To better understand the challenges associated with the CVD synthesis of the ternary chalcogenide, computational fluid dynamics simulations are performed to quantify 3D thermal and momentum transients in the growth conditions. While these gradients are qualitatively known to exist, they have not been adequately quantified in both the axial and radial directions when under pressure and flow conditions indicative of VLS growth. These data are not easily acquired by conventional means for the axial direction under vacuum and are a considerable challenge to accurately measure radially. The simulation data shown here provide 3D insights into the gradients which ultimately dictate the region of controllable stoichiometry and morphology. These results help explain the observed inhomogeneity of the characterized ternary chalcogenide growth products at various growth substrate locations.