Thermal annealing of thin films of CdSe/CdS core/shell quantum dots induces superordering of the nanocrystals and a significant reduction of the interparticle spacing. This results in a drastic enhancement of the quantum yield for charge carrier photogeneration and the charge carrier mobility. The mobile electrons have a mobility as high as 0.1 cm(2)/(V x s), which represents an increase of 4 orders of magnitude over non-annealed QD films and exceeds existing literature data on the electron mobility in CdSe quantum dot films. The lifetime of mobile electrons is longer than that of the exciton. A fraction of the mobile electrons gets trapped at levels below the conduction band of the CdSe nanocrystals. These electrons slowly diffuse over 50-300 nm on longer times up to 20 micros and undergo transfer to a TiO2 substrate. The yield for electron injection in TiO2 from both mobile and trapped electrons is found to be >16%.