A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe(16)S(20)](8-) layer and reduced thermal conductivity

Min Wu; Jessica Rhee; Thomas J Emge; Hongbin Yao; Jen-Hau Cheng; Suraj Thiagarajan; Mark Croft; Ronggui Yang; Jing Li

doi:10.1039/b920118a

A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe(16)S(20)](8-) layer and reduced thermal conductivity

Chem Commun (Camb). 2010 Mar 14;46(10):1649-51. doi: 10.1039/b920118a. Epub 2010 Feb 6.

Authors

Min Wu¹, Jessica Rhee, Thomas J Emge, Hongbin Yao, Jen-Hau Cheng, Suraj Thiagarajan, Mark Croft, Ronggui Yang, Jing Li

Affiliation

¹ Department of Chemistry and Chemical Biology Rutgers University, Piscataway, NJ 08854, USA.

PMID: 20177604
DOI: 10.1039/b920118a

Abstract

A low band gap iron sulfide hybrid semiconductor with unique layered structure and unusual iron coordination exhibits significantly reduced thermal conductivity.