High-performance single nanowire tunnel diodes

Nano Lett. 2010 Mar 10;10(3):974-9. doi: 10.1021/nl903941b.

Abstract

We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Crystallization / methods*
  • Equipment Design
  • Equipment Failure Analysis
  • Macromolecular Substances / chemistry
  • Materials Testing
  • Molecular Conformation
  • Nanostructures / chemistry*
  • Nanostructures / ultrastructure*
  • Nanotechnology / instrumentation*
  • Particle Size
  • Semiconductors*
  • Surface Properties

Substances

  • Macromolecular Substances