High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode

F Y Gardes; A Brimont; P Sanchis; G Rasigade; D Marris-Morini; L O'Faolain; F Dong; J M Fedeli; P Dumon; L Vivien; T F Krauss; G T Reed; J Martí

doi:10.1364/OE.17.021986

High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode

Opt Express. 2009 Nov 23;17(24):21986-91. doi: 10.1364/OE.17.021986.

Authors

F Y Gardes¹, A Brimont, P Sanchis, G Rasigade, D Marris-Morini, L O'Faolain, F Dong, J M Fedeli, P Dumon, L Vivien, T F Krauss, G T Reed, J Martí

Affiliation

¹ Advanced Technology Institute, University of Surrey Guildford, Surrey, UK. F.gardes@surrey.ac.uk

PMID: 19997443
DOI: 10.1364/OE.17.021986

Abstract

High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19 GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Electronics / instrumentation
Microscopy, Electron, Scanning / methods
Optical Devices*
Optics and Photonics*
Photons
Refractometry
Silicon / chemistry*

Substances

Silicon