Doped VO2 thin films, with different W at.% and consequent dissimilar transition temperatures, were successfully deposited onto SiO2-coated float-glass substrates by reactive direct current (DC) magnetron sputtering. Structural analyses have shown, for undoped films, single phase VO2(M) films with c-axis (002) direction as the preferred crystal orientation. The addition of tungsten into the VO2 solid solution favored the crystallization in the (011) direction which became dominant above a critical level of dopant concentration. The surface morphology of pure VO2 films revealed elongated grains oriented within the film plane. The doped films evidenced an increased tendency to be oriented out of the film plane which has resulted in increased roughness levels. The doping methodology associated with optimized processing conditions allowed the production of W-doped VO2 films with reduced transition temperatures, from 63 down to 28 degrees C, and maximum transmittances at the visible region ranging 40%. The relationship between tungsten content in the film and consequent transition temperature expressed a linear behavior.