Electrodeposition experiments of the charge-transfer complex copper tetracyanoquinodimethane (CuTCNQ) (where TCNQ denotes 7,7',8,8'-tetracyanoquinodimethane) on noble metal electrodes (M=Pt and Au) were optimized in order to produce suitable layers for bipolar resistive switching cross-bar M/CuTCNQ/Al memory cells. Corresponding memories exhibited up to more than 10 000 consecutive write/erase cycles, with very stable on and off reading currents and an on/off current ratio of 10. CuTCNQ electrodeposition techniques were furthermore optimized for growing the material in 250 nm diameter contact holes of complementary metal oxide semiconductor dies with tungsten bottom contacts.