Reported here are easily accessible memory devices based upon stripes of chemical vapor deposited (CVD) nanosized irregular discs of graphitic material that can be layered in stripes <or=10 nm thick with controllable lengths and widths. These lithographic graphitic stripes, which can be easily fabricated in large quantities in parallel by conventional fabrication techniques (such as CVD and photo- or e-beam lithography), with yields >95%, are shown to exhibit voltage-induced switching behavior, which can be used for two-terminal memories. These memories are stable, rewritable, and nonvolatile with ON/OFF ratios up to 10(7), switching times down to 1 mus (tested limit), and switching voltages down to 3-4 V. The major functional parameters of these lithographic memories are shown to be scalable with the devices' dimensions.