Spin injection in lateral InAs quantum dot structures by optical orientation spectroscopy

Nanotechnology. 2009 Sep 16;20(37):375401. doi: 10.1088/0957-4484/20/37/375401. Epub 2009 Aug 26.

Abstract

Optical spin injection is studied in novel laterally-arranged self-assembled InAs/GaAs quantum dot structures, by using optical orientation measurements in combination with tunable laser spectroscopy. It is shown that spins of uncorrelated free carriers are better conserved during the spin injection than the spins of correlated electrons and holes in an exciton. This is attributed to efficient spin relaxation promoted by the electron-hole exchange interaction of the excitons. Our finding suggests that separate carrier injection, such as that employed in electrical spin injection devices, can be advantageous for spin conserving injection. It is also found that the spin injection efficiency decreases for free carriers with high momentum, due to the acceleration of spin relaxation processes.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Arsenicals / chemistry*
  • Indium / chemistry*
  • Microscopy, Atomic Force
  • Nanotechnology
  • Quantum Dots*
  • Spectrum Analysis / methods*

Substances

  • Arsenicals
  • Indium
  • indium arsenide