10-Gb/s and 10-km error-free transmission up to 100 degrees C with 1.3-microm wavelength wafer-fused VCSELs

Alexandru Mereuta; Grigore Suruceanu; Andrei Caliman; Vladimir Iacovlev; Alexei Sirbu; Eli Kapon

doi:10.1364/oe.17.012981

10-Gb/s and 10-km error-free transmission up to 100 degrees C with 1.3-microm wavelength wafer-fused VCSELs

Opt Express. 2009 Jul 20;17(15):12981-6. doi: 10.1364/oe.17.012981.

Authors

Alexandru Mereuta¹, Grigore Suruceanu, Andrei Caliman, Vladimir Iacovlev, Alexei Sirbu, Eli Kapon

Affiliation

¹ Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne 1015 Lausanne, Switzerland. alexandru.mereuta@epfl.ch

PMID: 19654702
DOI: 10.1364/oe.17.012981

Abstract

10-Gb/s modulation speed and transmission over 10-km SM fiber with BER < 10(-11) up to 100 degrees C temperature are achieved with optimized wafer-fused GaAs/AlGaAs-InP/InAlGaAs VCSELs incorporating re-grown tunnel junction. These VCSELs operate in the 1310-nm waveband and emit more than 1-mW single mode power in the full temperature range.

Publication types

Research Support, Non-U.S. Gov't