Passive mode-locking of a Nd:YAG ceramic laser by optical interference modulation in a GaAs wafer

Opt Express. 2007 Apr 30;15(9):5360-5. doi: 10.1364/oe.15.005360.

Abstract

We demonstrated passive mode-locking of a Nd:YAG ceramic laser by optical interference modulation in a GaAs wafer. The combined effect of Kerr nonlinearity and optical interference in GaAs acted as an artificial saturable absorber and resulted in mode-locking. Maximum average output power of the mode-locked laser was as high as 2.84W, with a slope efficiency of 48%. The mode-locked pulse duration was as short as 4.1 ps. To our knowledge, this is the shortest pulse obtained from all Nd:YAG lasers without dispersion compensation.