A new approach for an electrically driven microlaser based on a microdisk transferred onto Silicon is proposed. The structure is based on a quaternary InGaAsP p-i-n junction including three InAsP quantum wells, on a thin membrane transferred onto silicon by molecular bonding. A p++/n++ tunnel junction is used as the p-type contact. The technological procedure is described and first experimental results show a laser emission in pulsed regime at room temperature, with a threshold current near 1.5 mA.