We describe a high sensitivity measurement setup for the determination of recombination parameters in semiconductors at low levels of carrier injection. The setup is based on a lock-in amplifier and on a commercially available contactless conductivity detector. The information on recombination is extracted through the analysis, assuming quasi-steady-state conditions, of the low frequency, sinusoidally modulated photoconductivity signal induced by the illumination of a 950 nm light emitting diode array. Experimental results show a substantial increase in sensitivity with respect to traditional transient or quasi-steady-state techniques based on the same detection principle. The sensitivity bonus can be exploited for the extension of the carrier injection range for which effective recombination lifetime is measurable, both in the case of p-type and n-type wafers.