Synthesis, electronic structure, and Raman scattering of phosphorus-doped single-wall carbon nanotubes

I O Maciel; J Campos-Delgado; E Cruz-Silva; M A Pimenta; B G Sumpter; V Meunier; F López-Urías; E Muñoz-Sandoval; H Terrones; M Terrones; A Jorio

doi:10.1021/nl9004207

Synthesis, electronic structure, and Raman scattering of phosphorus-doped single-wall carbon nanotubes

Nano Lett. 2009 Jun;9(6):2267-72. doi: 10.1021/nl9004207.

Authors

I O Maciel¹, J Campos-Delgado, E Cruz-Silva, M A Pimenta, B G Sumpter, V Meunier, F López-Urías, E Muñoz-Sandoval, H Terrones, M Terrones, A Jorio

Affiliation

¹ Departamento de Fisica, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 31270-901 Brazil.

PMID: 19449833
DOI: 10.1021/nl9004207

Abstract

Substitutional phosphorus doping in single-wall carbon nanotubes (SWNTs) is investigated by density functional theory and resonance Raman spectroscopy. Electronic structure calculations predict charge localization on the phosphorus atom, generating nondispersive valence and conduction bands close to the Fermi level. Besides confirming sustitutional doping, accurate analysis of electron and phonon renormalization effects in the double-resonance Raman process elucidates the different nature of the phosphorus donor doping (localized) when compared to nitrogen substitutional doping (nonlocalized) in SWNTs.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.