The paper reports studies on contact behaviors between semiconducting zinc oxide nanowires and metal electrodes. Focused ion beam (FIB) is employed to deposit Pt on the contact between the nanowire and the metal electrodes for eliminating the Schottky barriers. By depositing Pt on one or two contacts of nanowires, we construct three types of nanostructure to investigate the contact behaviors. The experimental results reveal that FIB technology is an effective way to eliminate the contact barriers. We also establish a electric model to fit and predict the I-V characteristics for a metal-semiconductor-metal structure.