Ultra-low-k thin films of polyhedral oligomeric silsesquioxane/epoxy nanocomposites via covalent layer-by-layer assembly

Ying-Ling Liu; Chuan-Shun Liu; Wei-Hong Chen; Shi-Yi Chen; Ko-Shung Wang; Ming-Jyh Hwu

doi:10.1166/jnn.2009.384

Ultra-low-k thin films of polyhedral oligomeric silsesquioxane/epoxy nanocomposites via covalent layer-by-layer assembly

J Nanosci Nanotechnol. 2009 Mar;9(3):1839-43. doi: 10.1166/jnn.2009.384.

Authors

Ying-Ling Liu¹, Chuan-Shun Liu, Wei-Hong Chen, Shi-Yi Chen, Ko-Shung Wang, Ming-Jyh Hwu

Affiliation

¹ Department of Chemical Engineering and R&D Center for Membrane Technology, Chung Yuan Christian University, Chungli, Taoyuan 320, Taiwan.

PMID: 19435047
DOI: 10.1166/jnn.2009.384

Abstract

Polyhedral oligomeric silsesquioxane nanocomposites thin films on silicon surfaces were prepared by covalent layer-by-layer (LbL) assembly using octakis(glycidyldimethylsiloxy)octasilsesquioxane (OG-POSS) and 4,4(hexafluoroisopropylidene)dianiline (HID) as building blocks. The layer thickness increased linearly with the layer numbers. An ultra-low dielectric constant of approximately 1.57 was found with the LbL thin film. A novel approach to fabricate ultra low-k materials is demonstrated.

Publication types

Research Support, Non-U.S. Gov't