Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate

Opt Express. 2009 Apr 27;17(9):7036-42. doi: 10.1364/oe.17.007036.

Abstract

Room temperature, continuous-wave lasing in a quantum dot photonic crystal nanocavity on a Si substrate has been demonstrated by optical pumping. The laser was an air-bridge structure of a two-dimensional photonic crystal GaAs slab with InAs quantum dots inside on a Si substrate fabricated through wafer bonding and layer transfer. This surface-emitting laser exhibited emission at 1.3 microm with a threshold absorbed power of 2 microW, the lowest out of any type of lasers on silicon.

Publication types

  • Evaluation Study
  • Research Support, Non-U.S. Gov't

MeSH terms

  • Arsenicals / chemistry*
  • Computer-Aided Design
  • Equipment Design
  • Equipment Failure Analysis
  • Gallium / chemistry*
  • Indium / chemistry*
  • Lasers, Semiconductor*
  • Nanotechnology / instrumentation*
  • Quantum Dots*
  • Reproducibility of Results
  • Sensitivity and Specificity
  • Silicon / chemistry*
  • Temperature

Substances

  • Arsenicals
  • Indium
  • gallium arsenide
  • Gallium
  • indium arsenide
  • Silicon