Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K

M Manoharan; Yoshishige Tsuchiya; Shunri Oda; Hiroshi Mizuta

doi:10.1021/nl801992j

Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K

Nano Lett. 2008 Dec;8(12):4648-52. doi: 10.1021/nl801992j.

Authors

M Manoharan¹, Yoshishige Tsuchiya, Shunri Oda, Hiroshi Mizuta

Affiliation

¹ Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo, Japan. mano@neo.pe.titech.ac.jp

PMID: 19367857
DOI: 10.1021/nl801992j

Abstract

A radio frequency single-electron transistor (RF-SET) based on a silicon-on-insulator (SOI) substrate is demonstrated to operate successfully at temperatures above 4.2 K. The SOI SET was fabricated by inducing lateral constrictions in doped SOI nanowires. The device structure was optimized to overcome the inherent drawback of high resistance with the SOI SETs. We performed temperature variation measurements after five thermal cyclings of the same sample to 4.2 K and found that the single-dot device transport characteristics are highly stable. The charge sensitivity was measured to be 36 microe(rms) Hz(-1/2) at 4.2 K, and the RF-SET operation was demonstrated up to 12.5 K for the first time. This work is an important prerequisite to realizing operation of RF-SETs at noncryogenic temperatures.