Nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires

Keisuke Oka; Takeshi Yanagida; Kazuki Nagashima; Hidekazu Tanaka; Tomoji Kawai

doi:10.1021/ja8089922

Nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires

J Am Chem Soc. 2009 Mar 18;131(10):3434-5. doi: 10.1021/ja8089922.

Authors

Keisuke Oka¹, Takeshi Yanagida, Kazuki Nagashima, Hidekazu Tanaka, Tomoji Kawai

Affiliation

¹ Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka, 567-0047, Japan.

PMID: 19228063
DOI: 10.1021/ja8089922

Abstract

We have demonstrated the nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires for the first time. The self-assembled NiO nanowires are expected to open up opportunities to explore not only the detailed nanoscale mechanisms in NiO resistive memory switching but also next-generation nanoscale nonvolatile memory devices with the potential for high-density device integration and improved memory characteristics.